Factory Lead Time  

7 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-226-3, TO-92-3 (TO-226AA)

Number of Pins  

3

Weight  

453.59237mg

Transistor Element Material  

SILICON

Number of Elements  

1

Power Dissipation (Max)  

740mW Ta

Drive Voltage (Max Rds On, Min Rds On)  

5V 10V

Current - Continuous Drain (Id) @ 25℃  

430mA Tj

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

2.4V @ 1mA

Turn Off Delay Time  

10 ns

Operating Temperature  

-55°C~150°C TJ

Packaging  

Bulk

Published  

2012

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn)

Additional Feature  

LOGIC LEVEL COMPATIBLE, LOW THRESHOLD

Terminal Position  

BOTTOM

Number of Channels  

1

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

1W

Turn On Delay Time  

5 ns

FET Type  

P-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

2 Ω @ 1A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

150pF @ 20V

Rise Time  

7ns

Drain to Source Voltage (Vdss)  

40V

Vgs (Max)  

±20V

Fall Time (Typ)  

6 ns

Continuous Drain Current (ID)  

430mA

Gate to Source Voltage (Vgs)  

20V

Drain Current-Max (Abs) (ID)  

0.75A

Drain-source On Resistance-Max  

2Ohm

Drain to Source Breakdown Voltage  

-40V

Feedback Cap-Max (Crss)  

60 pF

Height  

5.33mm

Length  

5.21mm

Width  

4.19mm

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No